An Analytical 2d Model for a Symmetric Double Gate Mosfet Considering Quantum Mechanical Effects
نویسندگان
چکیده
A simple and efficient model is presented to study the quantization effects in the inversion layer of symmetrical undoped Double-Gate (DG) nMOSFET. The analytical models of Quantum corrected potential and surface potential for undoped symmetrical double-gate (SDG) MOS devices are presented in this paper. The analytical models are derived under Gradual Channel Approximation (GCA) by solving the Poisson’s equation. The Poisson’s equation is used here instead of solving complex Schrodinger–Poisson’s equation. Quantum mechanical effect in ultrathin silicon film is studied by introducing quantum confinement parameter and quantum corrected potential in the Poisson’s equation. Quantum corrected potential attains its maximum value near the interface and minimum value at the centre of the silicon film. The surface potential is reduced due to quantum confinement effect.
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